型号:

IPB041N04N G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 40V 80A TO263-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IPB041N04N G PDF
产品变化通告 Product Discontinuation 26/Jul/2012
标准包装 1,000
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 40V
电流 - 连续漏极(Id) @ 25° C 80A
开态Rds(最大)@ Id, Vgs @ 25° C 4.1 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大) 4V @ 45µA
闸电荷(Qg) @ Vgs 56nC @ 10V
输入电容 (Ciss) @ Vds 4500pF @ 20V
功率 - 最大 94W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 PG-TO263-2
包装 带卷 (TR)
其它名称 IPB041N04N G-ND
SP000391511
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